Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction

被引：5

作者：

Pashaev E.M. ^{[1
]}

Yakunin S.N. ^{[2
]}

Zaitsev A.A. ^{[2
]}

Mokerov V.G. ^{[3
]}

Fedorov Yu.V. ^{[3
]}

Imamov R.M. ^{[1
]}

机构：

[1] Shubnikov Inst. of Crystallography, Russian Academy of Sciences, Moscow

[2] Moscow State Inst. Radio Eng., E., Moscow

[3] Inst. of Radio Eng. and Electronics, Russian Academy of Sciences, Moscow

来源：

Russian Microelectronics | 2002年 / 31卷 / 5期

基金：

俄罗斯基础研究基金会;

关键词：

GaAs; Lateral Direction; Correlate Growth; GaAs Matrix; Selectively Dope;

D O I：

10.1023/A:1020291009521

中图分类号：

学科分类号：

摘要：

GaAs-based heterostructures with one, two, or three InAs quantum-dot layers are examined by high-resolution x-ray diffraction. The quality and structure of the specimens are characterized from rocking curves. In the case of three quantum-dot layers, two different superlattices alternating in the lateral direction are discovered in the specimen. The superlattices differ in the InAs content of the GaAs matrix. It is shown that the existence of two superlattices is due to the vertical correlated growth of quantum dots and is related to an InAs wetting layer.

引用

页码：310 / 317

页数：7

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