Diffusion properties of plastically deformed silicon crystals

被引：0

作者：

M. A. Aliev

Kh. O. Alieva

V. V. Seleznev

机构：

[1] Russian Academy of Sciences,Institute of Physics, Daghestan Science Center

来源：

Physics of the Solid State | 1999年 / 41卷

关键词：

Spectroscopy; Silicon; Indium; State Physics; Impurity Atom;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effect of dislocations generated by electroplastic strain on the electric-field-driven transport of impurity atoms of indium in single crystals of P-silicon is investigated experimentally. It is shown that when electrodiffusion of indium and strain are induced simultaneously, the impurity ions are preferentially dragged towards the anode.

引用

页码：936 / 937

页数：1

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