Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes

被引：0
作者：
V. V. Kabanov
Ye. V. Lebiadok
G. I. Ryabtsev
A. S. Smal
M. A. Shchemelev
D. A. Vinokurov
S. O. Slipchenko
Z. N. Sokolova
I. S. Tarasov
机构：
[1] National Academy of Sciences of Belarus,Stepanov Institute of Physics
[2] Russian Academy of Sciences,Ioffe Physical
来源：
Semiconductors | 2012年 / 46卷
关键词：
GaAs; Quantum Well; Nonradiative Recombination; Internal Quantum Efficiency; Pump Current;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Recombination rates due to radiative and nonradiative processes and the rate of recombination induced by amplified luminescence have been determined for lasers based on an asymmetric InGaAs/GaAs/AlGaAs heterostructure with an ultrawide waveguide in the subthreshold region. It is shown that the quantum efficiency of luminescence is no less than 91.5% for the laser samples studied.
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页码：1316 / 1320
页数：4
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