Measurement of residual stress in a multi-layer semiconductor heterostructure by micro-Raman spectroscopy

被引：0
作者：
Wei Qiu
Cui-Li Cheng
Ren-Rong Liang
Chun-Wang Zhao
Zhen-Kun Lei
Yu-Cheng Zhao
Lu-Lu Ma
Jun Xu
Hua-Jun Fang
Yi-Lan Kang
机构：
[1] Tianjin University,Tianjin Key Laboratory of Modern Engineering Mechanics, Department of Mechanics
[2] Tsinghua University,Institute of Microelectronics
[3] Shanghai Maritime University,College of Art and Sciences
[4] Dalian University of Technology,State Key Laboratory of Structural Analysis for Industrial Equipment
[5] Graduate School of the Chinese Academy of Sciences,undefined
来源：
Acta Mechanica Sinica | 2016年 / 32卷
关键词：
Residual stress; Multi-layer semiconductor heterostructure; Micro-Raman spectroscopy (MRS); Strained silicon; Germanium silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface energy and even leading to structure failure. This work presents a methodological study on the measurement of residual stress in a multi-layer semiconductor heterostructure. Scanning electron microscopy (SEM), micro-Raman spectroscopy (MRS), and transmission electron microscopy (TEM) were applied to measure the geometric parameters of the multilayer structure. The relationship between the Raman spectrum and the stress/strain on the [100] and [110] crystal orientations was determined to enable surface and cross-section residual stress analyses, respectively. Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained.
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页码：805 / 812
页数：7
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