共 38 条
- [1] Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures Semiconductors, 1998, 32 : 1134 - 1136
- [2] Effect of illumination on the rate of relaxation of light-induced metastable states in a-Si:H(B) Semiconductors, 2003, 37 : 727 - 729
- [3] Special features of relaxation of metastable states induced thermally and by photoexcitation in (a-Si:H):P films Semiconductors, 2000, 34 : 358 - 362
- [4] Photoinduced annealing of metastable defects in boron-doped a-Si:H films Semiconductors, 2003, 37 : 131 - 133
- [5] Long-term structural relaxation and photoinduced degradation in a-Si: H Semiconductors, 1998, 32 : 1128 - 1130
- [6] Relaxation of light-induced metastable state of boron-doped p-type a-Si:H Semiconductors, 1998, 32 : 105 - 108
- [7] Effect of illumination time on the annealing of optically created metastable defects in p-type a-Si:H Semiconductors, 1997, 31 : 287 - 289
- [8] Polarization photosensitivity of a-Si:H/c-Si heterojunctions Semiconductors, 2000, 34 : 790 - 793
- [10] Characterization of an a-Si:H/c-Si interface by admittance spectroscopy Semiconductors, 2005, 39 : 904 - 909