Constraints on Models of Electrical Transport in Optimally Doped La2−xSrxCuO4 from Measurements of Radiation-Induced Defect Resistance

被引：0

作者：

J. A. Clayhold

O. Pelleg

D. C. Ingram

A. T. Bollinger

G. Logvenov

D. W. Rench

B. M. Kerns

M. D. Schroer

R. J. Sundling

I. Bozovic

机构：

[1] Miami University,Department of Physics

[2] Brookhaven National Laboratory,Department of Physics and Astronomy

[3] Ohio University,undefined

[4] ZenSoft Inc.,undefined

来源：

Journal of Superconductivity and Novel Magnetism | 2010年 / 23卷

关键词：

Electrical transport; Resistivity; Cuprate superconductor; High temperature superconductor; LSCO; Normal state; Ion damage;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Precise measurements of the temperature dependence of additional resistivity caused by defect scattering were used to constrain models of carrier transport in La1.84Sr0.16CuO4. Where previous magnetotransport studies have delineated two distinct scattering processes, proportional to T and T2, respectively, the new defect scattering results suggest strongly that the two processes act as parallel conductance channels.

引用

页码：339 / 342

页数：3