Characterization of Generation Lifetime and Surface Generation Velocity of Semiconductor Wafers by a Contactless Zerbst Method

被引：0
|
作者：
Haruhiko Yoshida
Shingo Kuge
机构：
[1] University of Hyogo,Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering
来源：
Journal of Electronic Materials | 2010年 / 39卷
关键词：
Semiconductor; contactless electrical characterization; Zerbst method; generation lifetime; surface generation velocity;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A contactless Zerbst method has been developed to characterize the generation lifetime and the surface generation velocity of a semiconductor wafer. This characterization is unaffected by the gate leakage current or the device fabrication process. In this study, this contactless Zerbst method was used to characterize the generation lifetime and the surface generation velocity of a partially Au-doped Si wafer. The results demonstrate that the contactless Zerbst method is a powerful technique for characterizing the generation lifetimes and the surface recombination velocities of semiconductor wafers.
引用
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页码：773 / 776
页数：3
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