Formation and study of buried SiC layers with a high content of radiation defects

被引：0

作者：

E. V. Bogdanova

V. V. Kozlovski

D. S. Rumyantsev

A. A. Volkova

A. A. Lebedev

机构：

[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute

[2] St. Petersburg Polytechnical University,undefined

来源：

Semiconductors | 2004年 / 38卷

关键词：

Radiation; Heat Treatment; Magnetic Material; Electromagnetism; Photoluminescence Spectrum;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Protons with energy E=100 keV were implanted with doses ranging from 2×1017 to 4×1017 cm−2 into 6H-and 4H-SiC n-type samples at room temperature. The samples were subjected to various types of postimplantation heat treatment in the temperature range 550–1500°C. The parameters of the samples were studied by measuring the capacitance-voltage and current-voltage characteristics and by analyzing the photoluminescence spectra. Blistering on the surface of the sample is observed after annealing the samples at a temperature of 800°C only after implantation of protons with a dose of ≤3×1017 cm−2. A decrease in the resistivity of the compensated layer sets in after annealing at a temperature of ∼1200°C and is completed after annealing at a temperature of ∼1500°C. A drastic decrease in the photoluminescence intensity is observed after implantation for all types of samples. Recovery of the photoluminescence intensity sets in after annealing at temperatures ≥800°C and is complete after annealing at a temperature of 1500°C.

引用

页码：1176 / 1178

页数：2

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