Nonlocal Electron Dynamics in Donor‒Acceptor Doped Transistor Heterostructures

被引：1
作者：
Pashkovskii A.B. [1 ]
Bogdanov A.S. [1 ]
Lukashin V.M. [1 ]
Novikov S.I. [1 ]
机构：
[1] AO NPP Istok, Fryazino, 141195, Moscow oblast
来源：
Russian Microelectronics | 2020年 / 49卷 / 03期
关键词：
Electrons; -; Deterioration;
D O I：
10.1134/S1063739720030051
中图分类号：
学科分类号：
摘要：
Abstract: A simple phenomenological model for estimating a drift velocity peak in transistor heterostructures with the strong electron localization in the channel is developed using a self-consistent solution of the Schrödinger and Poisson equations and a system of hydrodynamic equations. It is shown that, when an electron enters the region of a strong field, the donor–acceptor doping increases the average drift velocity of electrons several times in the inverted heterostructures and by a factor of 1.5 in the transistor heterostructures based on the double-sided doped InxGa1 – xAs–AlyGa1 – yAs and InxGa1 – xAs–InyAl1 – yAs heterojunctions. In this case, the surface density of electrons in the double-sided doped structures can be more than doubled without a noticeable deterioration of the transport characteristics. © 2020, Pleiades Publishing, Ltd.
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页码：195 / 209
页数：14
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