Nonlocal Electron Dynamics in Donor‒Acceptor Doped Transistor Heterostructures

Abstract: A simple phenomenological model for estimating a drift velocity peak in transistor heterostructures with the strong electron localization in the channel is developed using a self-consistent solution of the Schrödinger and Poisson equations and a system of hydrodynamic equations. It is shown that, when an electron enters the region of a strong field, the donor–acceptor doping increases the average drift velocity of electrons several times in the inverted heterostructures and by a factor of 1.5 in the transistor heterostructures based on the double-sided doped InxGa1 – xAs–AlyGa1 – yAs and InxGa1 – xAs–InyAl1 – yAs heterojunctions. In this case, the surface density of electrons in the double-sided doped structures can be more than doubled without a noticeable deterioration of the transport characteristics. © 2020, Pleiades Publishing, Ltd.