Ion-Beam Synthesis of Ferromagnetic Films by the Implantation of Co+ Ions into Silicon

被引：1
作者：
Chirkov V.V. [1 ]
Gumarov G.G. [1 ]
Petukhov V.Y. [1 ]
Denisov A.E. [2 ]
机构：
[1] Kazan Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, Kazan
[2] Nanotechnology Center of the Republic of Tatarstan, Kazan
来源：
Journal of Surface Investigation | 2018年 / 12卷 / 01期
关键词：
ion implantation; ion-beam synthesis; Kerr effect; magnetic anisotropy; Néel–Taniguchi model of directional atomic pair ordering; thin magnetic films;
D O I：
10.1134/S1027451018010251
中图分类号：
学科分类号：
摘要：
Thin ferromagnetic films of cobalt silicide are synthesized by implanting Co+ ions into single-crystal silicon plates under an external magnetic field. Scanning magnetopolarimetry shows that the samples implanted at a dose greater than 2 × 1017 cm–2 have uniaxial magnetic anisotropy. Based on the dose dependence of the anisotropy field and the experiment on switching the direction of the easy magnetization axes, it is concluded that the induced magnetic anisotropy in the resulting films is due to the directional atomic pair ordering. The absence of the effect of external mechanical stress created during implantation on the magnetic properties of cobalt-silicide films is revealed. © 2018, Pleiades Publishing, Ltd.
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页码：149 / 153
页数：4
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