Study the aging effect on the optoelectronic properties of HgI2 nanorods /Si heterojunction photodetector

被引:0
|
作者
Raid A. Ismail
Mudhafar A. Mohammed
Amnah S. Abd-Alrahman
Inas I. Al-Rawi
机构
[1] University of Technology,Department of Applied Science
[2] Al-Esraa University College,Department of Dentistry
来源
Optical and Quantum Electronics | 2022年 / 54卷
关键词
HgI; /Si; Nanorods; Laser ablation; Photodetector; Aging;
D O I
暂无
中图分类号
学科分类号
摘要
The significant variation in the properties of optoelectronic devices with time due to the degradation in their materials represents a very important issue. This will allow us to make a decision to select an appropriate device for long-term operation that can withstand harsh environments. In this work, we studied the variation in the optoelectronic properties of the HgI2/Si photodetector during the aging process under normal ambient conditions (6 months of storage). The HgI2/Si photodetector is prepared by laser ablation in ethanol at a laser energy of 0.5 J. The XRD studies confirm the formation of orthorhombic β-HgI2. The TEM image of HgI2 NPs confirms the formation of the nanorods morphology with an average diameter of 33 and 106 nm for freshly prepared and stored samples, respectively. The electrical characteristics of fresh and stored p-HgI2/p-Si photodetectors, including the current–voltage in the dark and under illumination, were investigated. The dark I–V characteristics of p-HgI2/p-Si reveal that the forward current decreases and the reverse current increases after 6 months of storage at normal ambient. The ideality factor of the heterojunction increases from 2.9 to 6.1 after aging. The illuminated I–V characteristics show that the photocurrent is reduced by a factor of 1.97 at 180.1 mW/cm2 light intensity and − 4 V after storing. The responsivity decreases from 3.39 to 1.57 A/W after aging, as well as the detectivity and EQE decrease from 11.2 × 1012 to 5.2 × 1012 Jones and from 9.3 × 102 to 4.3 × 102%, respectively. The minority carrier lifetime of the photodetector decreased from 83 to 50 µs after the aging process. The photodynamic ON/OFF ratio and current–time characteristics are demonstrated.
引用
收藏
相关论文
共 50 条
  • [21] Properties of electrodes on HgI2 polycrystalline films
    Perez, M.
    Noguerol, I.
    Fornaro, L.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2009, 610 (01): : 328 - 331
  • [22] Electrical Properties of Polycrystalline α-HgI2 Detector
    Liu, Gonglong
    Yang, Liao
    Shi, Weimin
    Yang, Weiguang
    Wang, Yali
    Wang, Linjun
    INDUSTRIAL INSTRUMENTATION AND CONTROL SYSTEMS, PTS 1-4, 2013, 241-244 : 46 - +
  • [23] Electronic and optical properties of red HgI2
    Ahuja, R
    Eriksson, O
    Johansson, B
    Auluck, S
    Wills, JM
    PHYSICAL REVIEW B, 1996, 54 (15): : 10419 - 10424
  • [24] Surface aging of HgI2 crystals studied by VASE and AFM
    Yao, H
    Lim, LA
    James, RB
    Schieber, M
    Natarajan, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 380 (1-2): : 26 - 29
  • [25] Surface aging of HgI2 crystals studied by VASE and AFM
    Univ of Nebraska, Lincoln, United States
    Nucl Instrum Methods Phys Res Sect A, 1-2 (26-29):
  • [26] PHOTODIELECTRIC EFFECT IN HGI2= CDS SYSTEM
    PILLAI, PKC
    NATH, R
    AHUJA, RC
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1976, 14 (10) : 826 - 828
  • [27] DEFECT LEVELS IN HGI2 AND ILLUMINATION EFFECT
    MOHAMMEDBRAHIM, T
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 65 (01): : K1 - K6
  • [28] Theoretical study of the dislocation structure in HgI2
    Georgeson, Gary, 1600, (285):
  • [29] Studying the effect of Sn doping on the optoelectronic properties of PbI2 nanosheets/Si heterojunction photodetector prepared by chemical bath deposition
    Hasan, Noor
    Ismail, Raid A.
    Hamza, Mohammed S.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2023, 129 (10):
  • [30] Investigation of structural and optoelectronic properties of n-MoS2/p-Si sandwiched heterojunction photodetector
    Ahmad, Harith
    Rashid, Haroon
    Ismail, Mohammad Faizal
    OPTIK, 2019, 198