MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates

被引：0
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作者：
R. R. Reznik
K. P. Kotlyar
I. P. Soshnikov
S. A. Kukushkin
A. V. Osipov
G. E. Cirlin
机构：
[1] St. Petersburg Academic University Russian Academy of Sciences,
[2] ITMO University,undefined
[3] Institute for Analytical Instrumentation Russian Academy of Sciences,undefined
[4] Peter the Great Polytechnic University,undefined
[5] Institute of Problems of Mechanical Engineering Russian Academy of Science,undefined
来源：
Semiconductors | 2018年 / 52卷
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摘要：
The possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate—the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.
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页码：651 / 653
页数：2
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