Acquisition of optimal operating temperature for epitaxial Si:P blocked-impurity-band detector based on temperature-dependent characteristics investigation

被引：0
作者：
Bingbing Wang
Xiaodong Wang
Xiaoyao Chen
Liwei Hou
Wei Xie
Ming Pan
机构：
[1] No. 50 Research Institute of China Electronics Technology Group Corporation,Laboratory of Advanced Material
[2] Fudan University,undefined
来源：
Optical and Quantum Electronics | 2016年 / 48卷
关键词：
Dark Current; Background current; Black-body responsivity; Signal-to-noise ratio; Blocked-impurity-band detector;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The structure and fabrication of epitaxial Si:P blocked-impurity-band detector have been presented in detail. Experimental testing systems were constructed. The Characteristics of dark current, background current, black-body responsivity and signal-to-noise ratio have been investigated as functions of bias voltage and temperature. It is found that the optimal operating temperature for the epitaxial Si:P BIB detector is about 20 K at bias voltage below 2 V.
引用
收藏
相关论文
共 89 条
[1]  
Aronzon BA(1998)Current–voltage characteristics of Si:B blocked impurity-band structures under conditions of hopping-transport-limited photoresponse Semiconductors 32 175-180
[2]  
Kovalev DY(2007)Ion-implanted Ge: B far-infrared blocked-impurity-band detectors Infrared Phys. Technol. 51 60-65
[3]  
Kozlov AM(1999)Current-voltage characteristics of Si:As blocked impurity band photodetectors with hopping conductivity (BIB-II) Semiconductors 33 915-919
[4]  
Leotin J(2003)BIB detector development for the far infrared from Ge to GaAs Proc. SPIE 4999 182-194
[5]  
Ryl’kov VV(2009)Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors J. Appl. Phys. 105 104502-275
[6]  
Beeman JW(2013)Dependence of ion-implant-induced LBIC novel characteristic on excitation intensity for long-wavelength HgCdTe-based photovoltaic infrared detector pixel arrays IEEE J. Sel. Top. Quantum Electron. 19 4100107-1931
[7]  
Goyal S(1992)Si:Sb blocked impurity band detectors for infrared astronomy J. Appl. Phys. 72 273-238
[8]  
Reichertz LA(2012)Antimony doped silicon blocked impurity band (BIB) arrays for low flux applications Proc. SPIE 8512 85120O-4-65
[9]  
Haller EE(2013)Ion-implanted Si:P blocked-impurity-band photodetectors for far-infrared and terahertz radiation detection Proc. SPIE 8909 890913-1-1401
[10]  
Esaev DG(2014)Extended mode in blocked impurity band detectors for terahertz radiation detection Appl. Phys. Lett. 105 143501-1355
123456789