Manganese diffusion in ingaas/gaas quantum well structures

被引：0

作者：

O. V. Vikhrova

Yu. A. Danilov

M. N. Drozdov

B. N. Zvonkov

I. L. Kalent’eva

机构：

[1] Nizhni Novgorod State University,Physico

[2] Russian Academy of Sciences,Technical Research Institute

来源：

Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2012年 / 6卷

关键词：

GaAs; Neutron Technique; Delta Layer; Anti Site Defect; Manganese Diffusion;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Manganese diffusion during annealing of structures with InGaAs/GaAs quantum wells and a Mn delta-layer is investigated by photoluminescence and secondary ion mass spectrometry. Annealing at 365–425°C results in quenching of the photoluminescence intensity for the quantum well nearest to the Mn deltalayer, due to Mn diffusion into the quantum well. The penetration of Mn and In into the GaAs coating/cover layer is discovered. Near the surface the profiles of these elements are similar.

引用

页码：508 / 510

页数：2

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