X-Ray Diffraction Analysis of Epitaxial Layers with the Properties of a Dislocation Filter

被引：0
|
作者：
I. D. Loshkarev
A. P. Vasilenko
E. M. Trukhanov
A. V. Kolesnikov
M. O. Petrushkov
M. A. Putyato
机构：
[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
来源：
Technical Physics Letters | 2018年 / 44卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An approach to instant testing of epitaxial films with a sharp decrease in the threading dislocation density is proposed. High-resolution X-ray diffractometry, including reciprocal space mapping, has been used. The structure of GaAs/Si(001) heterosystems with low-temperature GaAs layers has been analyzed. A decrease in the density of threading dislocations in the GaAs film with the formation of a small-angle boundary has been detected.
引用
收藏
页码：562 / 565
页数：3
相关论文
共 50 条
  • [1] X-Ray Diffraction Analysis of Epitaxial Layers with the Properties of a Dislocation Filter
    Loshkarev, I. D.
    Vasilenko, A. P.
    Trukhanov, E. M.
    Kolesnikov, A. V.
    Petrushkov, M. O.
    Putyato, M. A.
    TECHNICAL PHYSICS LETTERS, 2018, 44 (07) : 562 - 565
  • [2] On the Use of an External Reference Sample in the X-ray Diffraction Analysis of Epitaxial Layers
    Drozdov, Yu N.
    Yunin, P. A.
    JOURNAL OF SURFACE INVESTIGATION, 2016, 10 (01): : 96 - 100
  • [3] High-resolution X-ray diffraction analysis and reflectivity of epitaxial thin layers
    Baulès, P
    Casanove, MJ
    Roucau, C
    Ousset, JC
    Bobo, JF
    Snoeck, E
    Magnoux, D
    Gatel, C
    JOURNAL DE PHYSIQUE IV, 2002, 12 (PR6): : 247 - 253
  • [4] Reciprocal-Space Maps of X-Ray Diffraction Intensity Distribution and Their Relation to the Dislocation Structure of Epitaxial Layers
    R. N. Kyutt
    M. P. Shcheglov
    Technical Physics Letters, 2018, 44 : 548 - 550
  • [5] Reciprocal-Space Maps of X-Ray Diffraction Intensity Distribution and Their Relation to the Dislocation Structure of Epitaxial Layers
    Kyutt, R. N.
    Shcheglov, M. P.
    TECHNICAL PHYSICS LETTERS, 2018, 44 (06) : 548 - 550
  • [6] Mapping of CdZnTe substrates and CdHgTe epitaxial layers by X-ray diffraction
    Skauli, T
    Colin, T
    Lovold, S
    JOURNAL OF CRYSTAL GROWTH, 1997, 172 (1-2) : 97 - 105
  • [7] Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction
    ZiLi Xie
    YuanJun Zhou
    LiHong Song
    Bin Liu
    XueMei Hua
    XiangQian Xiu
    Rong Zhang
    YouDou Zheng
    Science China Physics, Mechanics and Astronomy, 2010, 53 : 68 - 71
  • [8] Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction
    XIE ZiLi 1
    2 Nanjing National Laboratory of Microstructures
    3 NJU-Yangzhou Institute of Opto-electronics
    Science China(Physics,Mechanics & Astronomy), 2010, Mechanics & Astronomy)2010 (01) : 68 - 71
  • [9] Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction
    Xie ZiLi
    Zhou YuanJun
    Song LiHong
    Liu Bin
    Hua XueMei
    Xiu XiangQian
    Zhang Rong
    Zheng YouDou
    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 53 (01) : 68 - 71
  • [10] X-ray diffraction from dislocation half-loops in epitaxial films
    Kaganer, Vladimir M.
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2024, 57 (Pt 2) : 276 - 283
12345