Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

被引：0
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作者：
S. S. Krishtopenko
A. V. Ikonnikov
K. V. Maremyanin
L. S. Bovkun
K. E. Spirin
A. M. Kadykov
M. Marcinkiewicz
S. Ruffenach
C. Consejo
F. Teppe
W. Knap
B. R. Semyagin
M. A. Putyato
E. A. Emelyanov
V. V. Preobrazhenskii
V. I. Gavrilenko
机构：
[1] Russian Academy of Sciences,Institute for Physics of Microstructures
[2] Lobachevsky State University of Nizhny Novgorod,Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
[3] Universite Montpellier,Rzhanov Institute of Semiconductor Physics, Siberian Branch
[4] Russian Academy of Sciences,undefined
来源：
Semiconductors | 2017年 / 51卷
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摘要：
The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.
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页码：38 / 42
页数：4
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