Study of a deep donor level in n-GaAs by electron transport data obtained under hydrostatic pressure

被引：0

作者：

M. I. Daunov

U. Z. Zalibekov

I. K. Kamilov

A. Yu. Mollaev

机构：

[1] Russian Academy of Sciences,Amirkhanov Institute of Physics, Dagestan Scientific Center

来源：

Semiconductors | 2014年 / 48卷

关键词：

GaAs; Hydrostatic Pressure; Pressure Dependence; Hall Coefficient; Mobility Ratio;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The experimental pressure dependences of the resistivity and Hall effect at hydrostatic pressures from atmospheric to 18 GPa in n-GaAs are quantitatively analyzed. In the pressure range 10 ≤ P ≤ 18 GPa, a deep donor center is found. The position of its energy level relative to the conduction-band Γ valley edge at atmospheric pressure and its relation to the arsenic vacancy are discussed.

引用

页码：996 / 998

页数：2

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