Nonequilibrium segregation of phosphorus in the system silicon dioxide-silicon

被引：0
作者：
O. V. Aleksandrov
N. N. Afonin
机构：
[1] a Closed Joint-Stock Company,Svetlana
[2] Voronezh State Pedagogical University,Poluprovodniki
来源：
Semiconductors | 1998年 / 32卷
关键词：
Oxidation; Silicon; Experimental Data; Phosphorus; Mass Transfer;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A model of diffusion-segregation impurity redistribution in the system SiO2-Si during the thermal oxidation of silicon is developed, taking into account the nonequilibrium character of the segregation process at the moving phase boundary. The temperature dependence of the mass transfer of phosphorus and its mass-transfer coefficient at the SiO2-Si interface are determined by the numerical analysis of experimental data.
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页码：15 / 18
页数：3
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