Precision aspherization of the surface of optical elements by ion-beam etching

被引:7
|
作者
Zorina M.V. [1 ]
Nefedov I.M. [1 ,2 ]
Pestov A.E. [1 ,2 ]
Salashchenko N.N. [1 ]
Churin S.A. [1 ,2 ]
Chkhalo N.I. [1 ]
机构
[1] Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod
[2] Lobachevsky State University of Nizhny Novgorod, pr. Gagarina 23, Nizhny Novgorod
关键词
aspherization; imaging X-ray optics; ion etching; shape correction;
D O I
10.1134/S1027451015040394
中图分类号
学科分类号
摘要
Ion-beam methods are developed for forming supersmooth aspherical optical surfaces of polished fused quartz with a precision on the level of 3 nm relative to the standard deviation and 0.2–0.3 nm for the mean-square surface roughness in the range of spatial frequencies of 0.01–100 μm−1. © 2015, Pleiades Publishing, Ltd.
引用
收藏
页码:765 / 770
页数:5
相关论文
共 50 条
  • [21] PROFILE CONTROL BY CHEMICALLY ASSISTED ION-BEAM AND REACTIVE ION-BEAM ETCHING
    CHINN, JD
    ADESIDA, I
    WOLF, ED
    APPLIED PHYSICS LETTERS, 1983, 43 (02) : 185 - 187
  • [22] INTRODUCTION TO REACTIVE ION-BEAM ETCHING
    DOWNEY, DF
    BOTTOMS, WR
    HANLEY, PR
    SOLID STATE TECHNOLOGY, 1981, 24 (02) : 121 - 127
  • [23] ION-BEAM ETCHING WITH REACTIVE GASES
    BOLLINGER, LD
    SOLID STATE TECHNOLOGY, 1983, 26 (01) : 99 - 108
  • [24] MICROFABRICATION BY ION-BEAM ETCHING.
    Lee, Robert E.
    Semiconductor International, 1980, 3 (01): : 73 - 80
  • [25] ION-BEAM ASSISTED ETCHING OF SEMICONDUCTORS
    ZALM, PC
    VACUUM, 1986, 36 (11-12) : 787 - 797
  • [26] REACTIVE ION-BEAM ETCHING.
    Heath, B.A.
    Mayer, T.M.
    VLSI Electronics, Microstructure Science, 1984, 8 : 365 - 409
  • [27] ION-BEAM ASSISTED ETCHING AND DEPOSITION
    GAMO, K
    NAMBA, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1927 - 1931
  • [28] ION-BEAM ETCHING FOR BETTER BONDING
    不详
    CME-CHARTERED MECHANICAL ENGINEER, 1984, 31 (11): : 101 - 101
  • [29] APPLICATION OF ION-BEAM ETCHING IN MICROELECTRONICS
    EHRIG, K
    SCHLENK, R
    FALZ, M
    BIGL, F
    NEUMANN, H
    FAUST, B
    VACUUM, 1987, 37 (1-2) : 197 - 197
  • [30] VLSI REACTIVE ION-BEAM ETCHING
    CUSTODE, FZ
    FEWER, W
    SPLINTER, M
    DOWNEY, DF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C105 - C105