Incoherent multiple Andreev reflection in an array of SNS junctions

被引:0
作者
N. M. Chtchelkatchev
机构
[1] Russian Academy of Sciences,Landau Institute for Theoretical Physics
[2] Russian Academy of Sciences,Institute for High Pressure Physics
[3] Moscow Institute of Physics and Technology,undefined
来源
Journal of Experimental and Theoretical Physics Letters | 2006年 / 83卷
关键词
73.23.-b; 74.45+c; 74.81.Fa;
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摘要
Last year, many interesting effects related to incoherent multiple Andreev reflection (MAR) were experimentally found, but only a few of them were theoretically explained. It was shown, for example, that if the voltage at the edges of a linear array is V, then subgarmonic structures in the current-voltage characteristics appear not only at the positions usual for the nonstationary Josephson effect, Vn = 2Δ/n, where n is integer, but also at voltages other than Vn. A step towards the description of the electron transport in a dirty array of SNS junctions is made in this letter. It is shown that subgarmonic structures may indeed appear at unusual voltages.
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页码:250 / 255
页数:5
相关论文
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