Low temperature electron mobility in Ga0.5In0.5P/GaAs quantum well structures

We analyse the low temperature subband electron mobility in a Ga0.5In0.5P/GaAs quantum well structure where the side barriers are delta-doped with layers of Si. The electrons are transferred from both the sides into the well forming two dimensional electron gas (2DEG). We consider the interface roughness scattering in addition to ionised impurity scattering. The effect of screening of the scattering potentials by 2DEG on the electron mobility is analysed by changing well width. Although the ionized impurity scattering is a dominant mechanism, for small well width the interface roughness scattering happens to be appreciable. Our analysis can be utilized for low temperature device applications.