Nondestructive diagnostics of microchannel (Macroporous) silicon by X-ray topography

被引：0
|
作者：
E. V. Astrova
A. D. Remenyuk
A. G. Tkachenko
I. L. Shul’pina
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Technical Physics Letters | 2000年 / 26卷
关键词：
Silicon; Mechanical Stress; Silicon Layer; Channel Depth; Nondestructive Monitoring;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is demonstrated that X-ray topography can be used for imaging the boundary between a microchannel silicon layer and a substrate, evaluating the quality of this interface, determining the channel depth, and revealing mechanical stresses. This technique can be used for nondestructive monitoring of the structure of a microchannel layer at a spatial resolution of ≥5 μm.
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页码：1087 / 1090
页数：3
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