Specific features of the nonequilibrium distribution function for electron scattering by polar optical phonons in III-V semiconductors

被引:0
作者
S. I. Borisenko
机构
[1] Kuznetsov Siberian Physicotechnical Institute,
来源
Semiconductors | 2001年 / 35卷
关键词
Distribution Function; GaAs; Complex Form; Magnetic Material; Boltzmann Equation;
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学科分类号
摘要
Numerical analysis of a nonequilibrium distribution function for electron scattering by polar optical phonons in a GaAs semiconductor is carried out. The Boltzmann equation for the nonequilibrium function was solved by the iteration method, with allowance made for electron distribution over the states. It is shown that the nonequilibrium addition to the distribution function has a complex form at low temperatures. The mobility values calculated using this function are compared with the value obtained within a conventional approximation.
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页码:298 / 301
页数:3
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