Investigation of stacking faults introduced into 4H-SiC crystals by indentation

被引：3

作者：

Orlov V.I. ^{[1
,2
]}

Yakimov E.B. ^{[1
]}

机构：

[1] Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast

[2] Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast

来源：

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques | 2017年 / 11卷 / 1期

关键词：

cathodoluminescence; electron-beam-induced-current method; silicon carbide; stacking fault;

D O I：

10.1134/S1027451016050578

中图分类号：

学科分类号：

摘要：

Stacking faults introduced into 4H-SiC crystals by indentation at 600°C are studied by the cathodoluminescence and electron-beam-induced-current (EBIC) methods. The type of stacking faults is determined using the cathodoluminescence spectra. Double stacking faults are shown to expand even under very low mechanical stresses, while the expansion of single stacking faults requires a higher stress. Such behavior is explained by different stacking-fault energies and electronic components of the effective driving force induced by electron capture into quantum wells associated with stacking faults. © 2017, Pleiades Publishing, Ltd.

引用

页码：234 / 237

页数：3

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