Magnetism in V-/Mn-doped ZnO layers fabricated on sapphire

被引:0
|
作者
A.C. Mofor
F. Reuss
A. El-Shaer
R. Kling
E. Schlenker
A. Bakin
H. Ahlers
U. Siegner
S. Sievers
M. Albrecht
W. Schoch
W. Limmer
J. Eisenmenger
T. Mueller
A. Huebel
G. Denninger
P. Ziemann
A. Waag
机构
[1] Technical University Braunschweig,Institute of Semiconductor Technology
[2] University Ulm,Department of Semiconductor Physics
[3] University Ulm,Department of Solid State Physics
[4] Physikalisch-Technische Bundesanstalt (PTB),2. Physkalisches Institut
[5] Universität Stuttgart,undefined
来源
Applied Physics A | 2007年 / 88卷
关键词
Magnetic Force Microscopy; Paramagnetic Behaviour; Squid Measurement; Normalise Magnetisation Curve; Report Room Temperature Ferromagnetism;
D O I
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中图分类号
学科分类号
摘要
Doping ZnO with transition metals (TM) is an obvious approach to produce diluted magnetic semiconductors for magnetoelectronic and spintronic applications. We have carried out experimental studies on the fabrication and characterisation of Mn-doped ZnO layers and V-doped ZnO layers and nanorods, the results of which are reviewed in this paper. From SQUID measurements, both epitaxial and implanted ZnMnO layers show paramagnetic behaviour. Epitaxial ZnVO layers show ferromagnetic SQUID signals, but the presence of any secondary phases in the ZnVO layers may not be ruled out. We also show that the used Al2O3 substrates produce a ferromagnetic SQUID signal, that complicates the analysis of magnetisation data and hence the confirmation of ferromagnetism only from SQUID results.
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页码:161 / 166
页数:5
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