Excitatory Post-Synaptic Potential Mimicked in Indium-Zinc-Oxide Synaptic Transistors Gated by Methyl Cellulose Solid Electrolyte

被引：0
作者：
Liqiang Guo
Juan Wen
Jianning Ding
Changjin Wan
Guanggui Cheng
机构：
[1] Micro/Nano Science & Technology Center,
[2] Jiangsu University,undefined
[3] Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering,undefined
[4] Jiangsu,undefined
[5] the Breeding Construction Point of State Key Laboratory of Photovolatic Engineering Science,undefined
[6] Changzhou University,undefined
[7] Ningbo Institute of Materials Technology & Engineering,undefined
[8] Chinese Academy of Sciences,undefined
来源：
Scientific Reports | / 6卷
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摘要：
The excitatory postsynaptic potential (EPSP) of biological synapses is mimicked in indium-zinc-oxide synaptic transistors gated by methyl cellulose solid electrolyte. These synaptic transistors show excellent electrical performance at an operating voltage of 0.8 V, Ion/off ratio of 2.5 × 106, and mobility of 38.4 cm2/Vs. After this device is connected to a resistance of 4 MΩ in series, it exhibits excellent characteristics as an inverter. A threshold potential of 0.3 V is achieved by changing the gate pulse amplitude, width, or number, which is analogous to biological EPSP.
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