Thermally Induced Deep Centers in Silicon Doped with Europium or Lanthanum

被引：0
作者：
Kh. S. Daliev
Sh. B. Utamuradova
I. Kh. Khamidzhonov
A. Zh. Akbarov
I. K. Mirzairova
Zh. Akimova
机构：
[1] Ulughbek State University,
来源：
Inorganic Materials | 2001年 / 37卷
关键词：
Oxygen; Spectroscopy; Silicon; Europium; Heat Treatment;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Melt-grown silicon crystals doped with europium or lanthanum were studied by capacitance spectroscopy and infrared absorption spectrophotometry. The Eu and La in the as-grown crystals were demonstrated to be electrically inactive. Annealing in the temperature range 900–1200°C produced a few deep levels in the band gap of both n-Si〈Eu〉 and n-Si〈La〉. These levels are likely related to the activation of the Eu and La impurities: Eu seems to be responsible for the levels at Ec– 0.40 eV and Ec– 0.46 eV, and La for the level at Ev+ 0.32 eV. Infrared absorption measurements indicate that heat treatment increases the concentration of optically active (interstitial) oxygen in the crystals by 15–20%.
引用
收藏
页码：436 / 438
页数：2
相关论文
共 50 条
  • [21] Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium
    V. V. Emtsev
    V. V. Emtsev
    D. S. Poloskin
    N. A. Sobolev
    E. I. Shek
    J. Michel
    L. C. Kimerling
    Semiconductors, 1999, 33 : 603 - 605
  • [22] Thermally induced defects in silicon irradiated with fast neutrons
    Misiuk, A.
    Wierzchowski, W.
    Wieteska, K.
    Romanowski, P.
    Bak-Misiuk, J.
    Prujszczyk, M.
    Londos, C. A.
    Graeff, W.
    RADIATION PHYSICS AND CHEMISTRY, 2009, 78 : S67 - S70
  • [23] Preparation of europium-doped porous silicon by constant-potential electrolysis and photoluminescence of porous silicon:Eu
    Gong, ML
    Zeng, CL
    Shi, JX
    Wong, WW
    Cheah, KW
    Zheng, WH
    CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE, 1999, 20 (05): : 750 - 753
  • [24] Luminescence of europium doped silicon-substituted hydroxyapatite nanobiophosphor via a coprecipitation method
    Vuong-Hung Pham
    Nguyen Ngoc Trung
    MATERIALS LETTERS, 2014, 136 : 359 - 361
  • [25] Nonlinear optical absorption of beryllium isoelectronic centers doped in silicon waveguides
    Sumikura, Hisashi
    Kuramochi, Eiichi
    Notomi, Masaya
    APPLIED PHYSICS LETTERS, 2018, 113 (14)
  • [26] Quantitative analysis of thermally induced desorption during halogen-etching of a silicon (111) surface
    Shudo, K.
    Kirimura, T.
    Tanaka, Y.
    Ishikawa, T.
    Tanaka, M.
    SURFACE SCIENCE, 2006, 600 (16) : 3147 - 3153
  • [27] Deep level anomalies in silicon doped with radioactive Au atoms
    Bollmann, J
    Lindner, S
    Henry, MO
    McGlynn, E
    Knack, S
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 433 - 436
  • [28] Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment
    I. V. Antonova
    V. P. Popov
    D. V. Kilanov
    E. P. Neustroev
    A. Misuk
    Semiconductors, 1999, 33 : 1049 - 1053
  • [29] Studies on process induced deep levels in silicon
    Rangaiah, SVP
    Reddy, SV
    Reddy, PN
    Reddy, BPN
    Rao, KSRK
    Salkalachan, S
    BULLETIN OF ELECTROCHEMISTRY, 1998, 14 (11): : 394 - 397
  • [30] Solid state magnetic resonance investigation of the thermally-induced structural evolution of silicon oxide-doped hydrogenated amorphous carbon
    Peng, Jing
    Sergiienko, Anastasiia
    Mangolini, Filippo
    Stallworth, Phillip E.
    Greenbaum, Steve
    Carpick, Robert W.
    CARBON, 2016, 105 : 163 - 175
12345