Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range

被引：0
|
作者：
N. A. Maleev
A. E. Zhukov
A. R. Kovsh
S. S. Mikhrin
V. M. Ustinov
D. A. Bedarev
B. V. Volovik
I. L. Krestnikov
I. N. Kayander
V. A. Odnoblyudov
A. A. Suvorova
A. F. Tsatsul’nikov
Yu. M. Shernyakov
N. N. Ledentsov
P. S. Kop’ev
Zh. I. Alferov
D. Bimberg
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] Technische Universität Berlin,Institut für Festkörperphysik
来源：
Semiconductors | 2000年 / 34卷
关键词：
GaAs; Growth Condition; Magnetic Material; Wavelength Range; Electromagnetism;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A method is proposed for growing stacked InAs/InGaAs self-organized quantum dots on GaAs substrates. The technique allows fabrication of structures exhibiting intense and narrow-line photoluminescence in the 1.3 µm wavelength region. The influence of growth conditions on structural and optical characteristics was studied. The proposed structures show promise in developing vertical-cavity surface-emitting devices.
引用
收藏
页码：594 / 597
页数：3
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