Novel red phosphors Gd2GaTaO7:Eu3+,Bi3+ for white LED applications

被引：0
作者：
Linda T. Francis
P. Prabhakar Rao
S. K. Mahesh
T. S. Sreena
Parvathi S. Babu
机构：
[1] CSIR-National Institute for Interdisciplinary Science and Technology (NIIST),Materials Science and Technology Division
来源：
Journal of Materials Science: Materials in Electronics | 2015年 / 26卷
关键词：
Charge Transfer Band; Phosphor Material; Photoluminescence Emission; High Temperature Solid State Reaction; Green Phosphor;
D O I：
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中图分类号：
学科分类号：
摘要：
Novel red phosphor materials Gd2−x−yGaTaO7:xEu3+,yBi3+ were prepared using a high temperature solid state reaction route. Crystalline structure, morphology, absorbance and photoluminescence properties were studied using powder X-ray diffractometer, scanning electron microscope, UV–Vis absorption spectrophotometer and fluorescence spectrophotometer respectively. Red shift in the charge transfer band coupled with an increased emission intensity in the red region ~612 nm was observed with Bi3+ codoping. Energy transfer from Bi3+ to Eu3+ was found to be the major mechanism towards the enhancement of the emission intensity. Optimal doping level of Eu3+ and Bi3+ in Gd2GaTaO7 host was determined from the photoluminescence studies. The prepared samples exhibited higher emission intensities than the standard Y2O3:Eu3+ red phosphors.
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页码：5743 / 5747
页数：4
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