Plasma-enhanced chemical vapor deposition and structural characterization of amorphous chalcogenide films

被引：0
|
作者：
P. Nagels
机构：
[1] RUCA-University of Antwerp,
来源：
Semiconductors | 1998年 / 32卷
关键词：
Spectroscopy; Hydride; Binary System; Raman Spectroscopy; Magnetic Material;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We describe the preparation of layers of amorphous Se, AsxS1−x, AsxSe1−x, GexS1−x, and GexSe1−x by plasma-enhanced chemical vapor deposition using the hydrides of the elements as precursor gases. We discuss the influence of the gas ratios and the deposition conditions (pressure, rf power input) on the chemical composition and the homogeneity of the binary systems. Information concerning the structure of the films was obtained from infrared and Raman spectroscopy.
引用
收藏
页码：855 / 860
页数：5
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