Thermodynamically self-consistent approximations to the liquidus and solidus of Hg1−xCdxTe

被引:0
|
作者
Hanjie Lee
Arne J. Pearlstein
机构
[1] University of Illinois at Urbana-Champaign,Department of Mechanical and Industrial Engineering
来源
关键词
Hg; Cd; Te; solid-liquid equilibrium; segregation coefficient;
D O I
暂无
中图分类号
学科分类号
摘要
Based on liquidus and solidus temperatures and associated confidence limits reported by Brice, Capper, and Jones [J. Cryst. Growth, 75, 395 (1986)], we develop polynomial approximations to the liquidus and solidus curves for the pseudobinary material Hg1−xCdxTe. These approximations are “thermodynamically consistent” in that they satisfy the requirement that the liquidus and solidus temperatures must agree at x=0 and 1. A linear programming approach is used to find the lowest-degree polynomial approximations to the liquidus and solidus temperatures falling within the confidence limits of Brice et al. at each of their 21 compositions, and also satisfying the convexity requirement imposed by Brice et al. on their own manually-drawn curves. Finally, we present a twoparameter rational approximation that fits the tabulated segregation coefficients for Hg1−xCdxTe better than an earlier five-parameter polynomial approximation.
引用
收藏
页码:65 / 69
页数:4
相关论文
共 50 条
  • [1] Thermodynamically self-consistent approximations to the liquidus and solidus of Hg1-xCdxTe
    Lee, H
    Pearlstein, AJ
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (02) : 65 - 69
  • [2] Vacancies in Hg1−xCdxTe
    D. Chandra
    H. F. Schaake
    J. H. Tregilgas
    F. Aqariden
    M. A. Kinch
    A. J. Syllaios
    Journal of Electronic Materials, 2000, 29 : 729 - 731
  • [3] Hg1−x−y−zCdxMnyZnzTe: A new alternative to Hg1−xCdxTe
    I. N. Gorbatyuk
    A. V. Markov
    S. É. Ostapov
    I. M. Rarenko
    Semiconductors, 2004, 38 : 1369 - 1373
  • [4] Modeling of the Structural Properties of Hg1–xCdxTe
    J.D. Benson
    M. Martinka
    Journal of Electronic Materials, 2008, 37 : 1166 - 1170
  • [5] Temperature dependence of the optical properties of Hg1−xCdxTe
    Charles C. Kim
    S. Sivananthan
    Journal of Electronic Materials, 1997, 26 : 561 - 566
  • [6] Noise properties of linear defects in Hg1−xCdxTe
    I. S. Virt
    W. Obermayr
    M. Bilyk
    M. Kuzma
    Journal of Electronic Materials, 2002, 31 : 831 - 833
  • [7] Hg1—xCdxTe的阳极氧化薄膜
    Y.Nemirovskg
    E.Finkman
    范炳筠
    红外技术, 1980, (02) : 106 - 110
  • [8] Current mechanisms in VLWIR Hg1−xCdxTe photodiodes
    A. I. D'Souza
    R. E. Dewames
    P. S. Wijewarnasuriya
    G. Hildebrandt
    J. M. Arias
    Journal of Electronic Materials, 2001, 30 : 585 - 589
  • [9] Effect of Hydrogen Free Radicals on Hg1−xCdxTe
    J. A. Wilks
    C. M. Tavakoli
    J. A. Kelber
    Journal of Electronic Materials, 2010, 39 : 857 - 862
  • [10] Large VLWIR Hg1−xCdxTe photovoltaic detectors
    A. I. D’Souza
    L. C. Dawson
    C. Staller
    P. S. Wijewarnasuriya
    R. E. Dewames
    W. V. Mclevige
    J. M. Arias
    D. Edwall
    G. Hildebrandt
    Journal of Electronic Materials, 2000, 29 : 630 - 635