Properties of a p–n Junction Formed in a Porous Silicon Film Grown by Metal-Assisted Chemical Etching

被引：0
作者：
N. N. Melnik
V. V. Tregulov
G. N. Skoptsova
A. I. Ivanov
D. S. Kostsov
机构：
[1] Lebedev Physical Institute,
[2] Russian Academy of Sciences,undefined
[3] Yesenin Ryazan State University,undefined
来源：
Bulletin of the Lebedev Physics Institute | 2022年 / 49卷
关键词：
porous silicon; metal-assisted chemical etching; junction; diffusion; Raman scattering; photovoltaic characteristics; current–voltage characteristics; charge carrier transport;
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页码：271 / 275
页数：4
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