Synthesis of GaP nanowires with Ga2O3 coating

Zinc-blende-type face centred cubic structure GaP nanowires with Ga2O3 coating were synthesized by heating Ga2O3 and red phosphorus powder with the assistance of NH3 and Ar at 1323 K. The GaP/Ga2O3 nanowires have a uniform size distribution with diameters ranging from tens of nm to hundreds of nm and lengths up to several micrometres. The inner GaP nanowires have almost a single-crystal structure with twin defects and have the 〈111〉 direction as preferential growth direction. Outer Ga2O3 layers were polycrystalline and acted as a protection layer for the inner GaP nanowires to permit their use at high temperature. The GaP/Ga2O3 structure may have potential applications in future nanodevice design.