Solar-blind MSM-photodetectors based on AlxGa1-xN heterostructures

被引：0
作者：
Stanislav V. Averin
Petr I. Kuznetzov
Victor A. Zhitov
Nikolai V. Alkeev
机构：
[1] Institute of Radio Engineering and Electronics Russian Academy of Science,
来源：
Optical and Quantum Electronics | 2007年 / 39卷
关键词：
AlGaN; Heterostructure; Metal–semiconductor–metal (MSM) diode; Solar-blind photodetector;
D O I：
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中图分类号：
学科分类号：
摘要：
Solar-blind MSM photodetectors based on the AlGaN heterostructures have been fabricated and investigated. The influence of material properties on device parameters is discussed. Effect of different buffer layers on the detector performances has been examined. Detectors exhibit low dark currents and high sensitivity within the range of 250–290 nm. Effect of optical excitation energy on GaN-based MSM-detector performance is analyzed and discussed. At high excitation level the detector speed of response is limited by the field screening caused by the space-charge of the holes. The impulse response of GaN-based MSM-detector is compared favorably with GaAs MSM-device.
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页码：181 / 192
页数：11
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