Pressure-induced metamagnetic transition in the Cd0.7Mn0.3GeAs2 ferromagnetic semiconductor

被引：0

作者：

A. Yu. Mollaev

I. K. Kamilov

R. K. Arslanov

T. R. Arslanov

U. Z. Zalibekov

V. M. Novotortsev

S. F. Marenkin

机构：

[1] Russian Academy of Sciences,Institute of Physics, Dagestan Scientific Center

[2] Russian Academy of Sciences,Kurnakov Institute of General and Inorganic Chemistry

来源：

JETP Letters | 2010年 / 91卷

关键词：

JETP Letter; Pressure Dependence; Structural Phase Transition; Ferromagnetic Semiconductor; Metamagnetic Transition;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The magnetic susceptibility χ/χ0 and the longitudinal Δρzz/ρ0 and transverse Δρxx/ρ0 magnetoresistances have been measured as functions of the hydrostatic pressure P ≤ 7 GPa at room temperature in the high-temperature ferromagnetic semiconductor Cd0.7Mn0.3GeAs2 with a chalcopyrite structure and the Curie temperature Tc = 355 K. A pressure-induced metamagnetic transition from the low-magnetization state to the high-magnetization state has been observed in Cd0.7Mn0.3GeAs2 near the magnetic ordering temperature. This transition is accompanied by the hysteresis of the magnetic susceptibility and magnetoresistance.

引用

页码：478 / 480

页数：2

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