Study of substrate temperature and copper doping effects on structural, electrical and optical properties of Cu-doped and undoped ZnO thin films

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作者
Peipei Zhou
Haonan Liu
Linao Zhang
Xiaoxia Suo
Zhongshuai Liang
Yanqi Liu
Yinglan Li
Zhaotan Jiang
Zhi Wang
机构
[1] Beijing Institute of Technology,Key Laboratory of Cluster Science, Ministry of Education of China, School of Physics
[2] Capital Normal University,The Beijing key Laboratory for Nano
关键词
Substrate Temperature; Energy Dispersive Spectrometer; Hexagonal Wurtzite Structure; Tail State; Undoped Film;
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学科分类号
摘要
Undoped and Cu-doped ZnO (ZnO:Cu) thin films were prepared using magnetron co-sputtering. Effects of substrate temperature Ts\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$T_{s}$$\end{document} on their structural, electrical and optical properties were comparatively investigated using X-ray diffraction, atom force microscopy, and ultraviolet visible spectrophotometer. ZnO:Cu thin films with different doping content were prepared and studied in order to investigate the effects of Cu-doping content. The results show that all the films exhibit a single phase (002)-oriented hexagonal wurtzite structure. Higher Ts\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$T_{s}$$\end{document} enhances the crystallinity and reduces the compressive stress of the films. Cu-doping and increasing Ts\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$T_{s}$$\end{document} lead to rougher surface and larger granules. The resistivity of both the ZnO and ZnO:Cu films increases with Ts\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$T_{s}$$\end{document}. Interestingly, optical band gap Eg\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$E_{g}$$\end{document} of ZnO:Cu films increases significantly with Ts\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$T_{s}$$\end{document}, while Eg\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$E_{g}$$\end{document} of undoped film is not obviously influenced by Ts\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$T_{s}$$\end{document}. Cu-doping content is an important factor affecting the physical properties of ZnO:Cu thin films. In our experiments, Cu-doping composition sightly decreases with Ts\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$T_{s}$$\end{document} increasing. Cu-doping reduces the resistivity, leads to the red-shift of absorption edge, and narrows Eg\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$E_{g}$$\end{document} of ZnO thin films.
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页码:7822 / 7828
页数:6
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