Optical response of tin nitride thin films prepared by halide chemical vapor deposition under atmospheric pressure

被引：0
作者：
N. Takahashi
K. Terada
T. Takahashi
T. Nakamura
W. Inami
Y. Kawata
机构：
[1] Shizuoka University,Department of Materials Science and Technology, Faculty of Engineering
[2] Suzuki Motor Corporation,Group I, Development
[3] Shizuoka University,Department of Mechanical Engineering, Faculty of Engineering
来源：
Journal of Electronic Materials | 2003年 / 32卷
关键词：
Optical response; SnNx; nitride; thin-film AP-HCVD;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Optical response of tin nitride (SnNx) films, which were deposited onto quartz substrates by means of atmospheric pressure, halide chemical vapor deposition (AP-HCVD), were examined by pulsed irradiation of a YAG laser (532 nm). It was observed that the transmittance of a light of a He-Ne laser (633 nm) through the SnNx film decreases after the film is irradiated with a YAG laser. The atomic force microscopy (AFM) micrograph observation confirmed that spot-like humps appeared on the SnNx film surface in the regions spotted by the YAG laser. This phenomenon was explained in terms of the laser-assisted thermal decomposition of SnNx to β-tin.
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页码：268 / 271
页数：3
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