Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs

被引：0
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作者：
A. V. Sakharov
W. V. Lundin
E. E. Zavarin
D. A. Zakheim
S. O. Usov
A. F. Tsatsulnikov
M. A. Yagovkina
P. E. Sim
O. I. Demchenko
N. Y. Kurbanova
L. E. Velikovskiy
机构：
[1] Ioffe Institute,
[2] Submicron Heterostructures for Microelectronics,undefined
[3] Research and Engineering Center,undefined
[4] Russian Academy of Sciences,undefined
[5] Tomsk State University,undefined
来源：
Semiconductors | 2018年 / 52卷
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页码：1843 / 1845
页数：2
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