N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics

This work presents the interfacial properties of hafnium-doped SiO2 films via N and P metal oxide semiconductor (MOS) materials, MOS-capacitor, and N and P metal oxide semiconductor field effect transistor (MOSFET) characterization. The results indicate that HfSixOy films (a) have excellent transistor characteristics; (b) remain amorphous through high-temperature processing; (c) are compatible with N+ and P+ polysilicon electrodes; (d) have lower gate leakage than SiO2 of the same equivalent oxide thickness (EOT); and (e) have a dielectric constant of ∼8. Therefore, the hafnium-doped SiO2 films are at-tractive as a dielectric material and offer a technologically relevant gate-stack node for insertion, prior to deployment of high-K dielectrics.