Photovoltaic and luminescence properties of Sb- and P-doped Si quantum dots

Sb-doped SiO1.2/SiO2 and InP-doped Si/SiO2 multilayers were prepared on p-type Si (100) wafers by ion beam sputtering and were subsequently annealed to form n-type Si quantum dots (QDs)/ptype crystalline Si heterojunction solar cells. Maximum energy-conversion efficiencies of 4.73 and 6.06% were obtained from the Sb- and the P-doped Si-QD solar cells, respectively. Based on the photovoltaic (PV) parameters, including the open-circuit voltage, short-circuit current density, fill factor, and energy-conversion efficiency, and on the photoluminescence (PL) spectra, we discuss possible physical mechanisms to explain the close correlation between the PV and the PL characteristics. These results are very promising for the development of next-generation all-Si-QD solar cells.