Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

被引：0
作者：
Mahesh Kumar
Basanta Roul
Thirumaleshwara N. Bhat
Mohana K. Rajpalke
Neeraj Sinha
A. T. Kalghatgi
S. B. Krupanidhi
机构：
[1] Materials Research Centre,
[2] Indian Institute of Science,undefined
[3] Central Research Laboratory,undefined
[4] Bharat Electronics,undefined
[5] Office of Principal Scientific Advisor,undefined
[6] Government of India,undefined
来源：
Journal of Nanoparticle Research | 2011年 / 13卷
关键词：
Indium nitride; Kinetics; Photoluminescence; Scaling behavior; Semiconductor quantum dot;
D O I：
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学科分类号：
摘要：
One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (~8%), the dots formed from the Strannski–Krastanow (S–K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.
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页码：1281 / 1287
页数：6
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