Two-dimensional semimetal in wide HgTe quantum wells: Charge-carrier energy spectrum and magnetotransport

被引：0
|
作者：
A. V. Germanenko
G. M. Minkov
O. E. Rut
A. A. Sherstobitov
S. A. Dvoretsky
N. N. Mikhailov
机构：
[1] Ural Federal University,Institute of Natural Sciences
[2] Russian Academy of Sciences,Institute of Metal Physics, Ural Branch
[3] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch
来源：
Semiconductors | 2013年 / 47卷
关键词：
Fermi Level; Gate Voltage; Landau Level; HgTe; Gate Voltage Versus;
D O I：
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学科分类号：
摘要：
The magnetoresistivity and the Hall and Shubnikov-de Haas effects in heterostructures with a single 20.2-nm-wide quantum well made from the gapless semiconductor HgTe are studied experimentally. The measurements are performed on gated samples over a wide range of electron and hole densities. The data obtained are used to reconstruct the energy spectrum of electrons and holes in the vicinity of the extrema of the quantum-confinement subbands. It is shown that the charge-carrier dispersion relation in the investigated systems differs from that calculated within the framework of the conventional kp model.
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页码：1562 / 1566
页数：4
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