Effects of near-surface defects on the optical, electrical and magnetic properties of ZnO films

被引：0
|
作者：
Vadim Sh. Yalishev
Shavkat U. Yuldashev
Khusan T. Igamberdiev
Tae Won Kang
Bae Ho Park
机构：
[1] Dongguk University,Quantum
[2] Konkuk University,functional Semiconductor Research Center
来源：
Journal of the Korean Physical Society | 2014年 / 64卷
关键词：
ZnO films; Photoluminescence; Surface defects; 71.55.Gs; 71.35-y; 78.55.Et; 78.68.+m.;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We studied the optical, electrical and magnetic properties of ZnO films prepared by using a pulsed laser deposition method. Low-temperature photoluminescence (PL) measurements revealed a strong emission line at 3.333 eV. A dependence of this emission intensity on oxygen adsorbed on the surface was observed, indicating a near-surface origin for the emission. The transition at 3.333 eV was attributed to bound exciton, and the observed anomalously small thermal activation energy in comparison with the localization energy could be explained by a modification of the surface state. The observed resistance switching effect and ferromagnetism in the ZnO films were related to the existence of defects responsible for the PL emission at 3.333 eV.
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页码：1590 / 1594
页数：4
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