Afterglow of GaN wurtzite-structure crystals doped by rare-earth metals

被引：0
|
作者：
V. V. Krivolapchuk
M. M. Mezdrogina
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Physics of the Solid State | 2004年 / 46卷
关键词：
Spectroscopy; State Physics; Fermi Level; Carrier Concentration; Photoluminescence Spectrum;
D O I：
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中图分类号：
学科分类号：
摘要：
The effect of impurity distribution and total defect concentration on the transport of nonequilibrium carriers has been estimated and specific features of afterglow in GaN and GaN〈Eu, Sm, Er〉 crystals revealed by measuring delayed near-edge photoluminescence spectra. A decrease in the total carrier concentration is shown to correlate with the afterglow in GaN wurtzite-structure crystals. The influence of additional illumination at a wavelength of 5145 Å on the evolution of delayed near-edge photoluminescence spectra was estimated in crystals with different Fermi level positions.
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页码：2201 / 2206
页数：5
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