Wideband Phase-Compensated VGA with PMOS Switch in 40-nm CMOS for 120-GHz Band

被引：0

作者：

Tae Hwan Jang

Seung Hun Kim

Chul Woo Byeon

Chul Soon Park

机构：

[1] Samsung Advanced Institute of Technology,Nano Electronics Lab

[2] Korea Advanced Institute of Science and Technology (KAIST),Department of Electrical Engineering

[3] Wonkwang University,Department of Electronic Engineering

来源：

Journal of Infrared, Millimeter, and Terahertz Waves | 2021年 / 42卷

关键词：

CMOS; 120 GHz; Variable gain amplifier; PMOS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper presents a 120-GHz wideband phase-compensated variable gain amplifier (VGA) with a p-type metal–oxide–semiconductor (PMOS) switch using a 40-nm CMOS process. By applying a PMOS switch to the common source (CS) amplifier, the gain of the CS amplifier can be controlled by as much as 6.1 dB with 2° phase variations in 15.1-GHz bandwidth ranging from 100.9 to 115 GHz. The measured gain and 3-dB bandwidth of the VGA are 19.1 dB and 33.8 GHz for high-gain state, and 13 dB and 44.2 GHz for low gain state, respectively. Meanwhile, the DC power consumption in the high-gain state is 45 mW, and the OP1dB is −2.7 dBm.

引用

页码：514 / 524

页数：10

共 40 条

[1] Wideband Phase-Compensated VGA with PMOS Switch in 40-nm CMOS for 120-GHz Band
Jang, Tae Hwan
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JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 2021, 42 (05) : 514 - 524
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