InP-to-InGaAs interfacial strain grown by using tertiarybutylarsine and tertiarybutylphosphine

被引：0

作者：

Xu X. ^{[1
]}

Cui D. ^{[1
]}

Tang Z. ^{[1
]}

Hao X. ^{[1
]}

Heime K. ^{[2
]}

机构：

[1] Stt. Key Lab. of Crystal Materials, Shandong University

[2] Institut f�r Halbleitertechnik, Shandong University

来源：

Science in China Series A: Mathematics | 2002年 / 45卷 / 5期

基金：

中国国家自然科学基金;

关键词：

InGaAs/InP; MOVPE; Strain; TBAs; TBP;

D O I：

10.1360/02ys9071

中图分类号：

学科分类号：

摘要：

Lattice-matched InGaAs/InP heterostructures have been grown by using metalorganic vapor phase epitaxy (MOVPE) with tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) as the group V sources. The results of X-ray diffraction on InGaAs/InP single herterostructure show that there is a compressive-strained interfacial layer at the InP-to-InGaAs interface. X-ray diffraction of InGaAs/ InP superlattices is successfully simulated by using the same interfacial layer. TBAs purging of InP surface has a significant influence on the interfacial strain. A novel gas switching sequence, which switches group III to the run line earlier than TBAs, is proposed to reduce this interfacial strain. As a result, the average compressive strain of superlattices decreases, and a blue shift of photoluminescence (PL) peak energy and narrowing in PL width are obtained.

引用

页码：655 / 660

页数：5

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