Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

被引：0
作者：
Wei Zhang
Ji-Zhou Kong
Zheng-Yi Cao
Ai-Dong Li
Lai-Guo Wang
Lin Zhu
Xin Li
Yan-Qiang Cao
Di Wu
机构：
[1] Nanjing University,National Laboratory of Solid State Microstructures, Materials Science and Engineering Department, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures
[2] Anqing Normal University,Anhui Key Laboratory of Functional Coordination Compounds, School of Chemistry and Chemical Engineering
来源：
Nanoscale Research Letters | 2017年 / 12卷
关键词：
Atomic layer deposition; Resistive random access memory; Bottom electrode; Resistive switching parameters; Oxygen vacancy concentration; Trilayer structure;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The HfO2/TiO2/HfO2 trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trilayer-structure units has been investigated. Both Pt/HfO2/TiO2/HfO2/Pt and Pt/HfO2/TiO2/HfO2/TiN exhibit typical bipolar resistive switching behavior. The dominant conduction mechanisms in low and high resistance states (LRS and HRS) of both memory cells are Ohmic behavior and space-charge-limited current, respectively. It is found that the bottom electrodes of Pt and TiN have great influence on the electroforming polarity preference, ratio of high and low resistance, and dispersion of the operating voltages of trilayer-structure memory cells. Compared to using symmetric Pt top/bottom electrodes, the RRAM cells using asymmetric Pt top/TiN bottom electrodes show smaller negative forming voltage of −3.7 V, relatively narrow distribution of the set/reset voltages and lower ratio of high and low resistances of 102. The electrode-dependent electroforming polarity can be interpreted by considering electrodes’ chemical activity with oxygen, the related reactions at anode, and the nonuniform distribution of oxygen vacancy concentration in trilayer-structure of HfO2/TiO2/HfO2 on Pt- and TiN-coated Si. Moreover, for Pt/HfO2/TiO2/HfO2/TiN devices, the TiN electrode as oxygen reservoir plays an important role in reducing forming voltage and improving uniformity of resistive switching parameters.
引用
收藏
相关论文
共 210 条
  • [1] Pan F(2014)Recent progress in resistive random access memories: materials, switching mechanisms, and performance Mater Sci Eng R 83 1-59
  • [2] Gao S(2009)Improvement of resistive switching characteristics in TiO Appl Phys Lett 95 042104-40
  • [3] Chen C(2007) thin films with embedded Pt nanocrystals Nat Mater 6 833-52
  • [4] Song C(2010)Nanoionics-based resistive switching memories Adv Mater 22 5048-2
  • [5] Zeng F(2007)Three dimensional integration of organic resistive memory devices Appl Phys Lett 91 022112-11
  • [6] Chang WY(2012)Decrease in switching voltage fluctuation of Pt/NiO Nanoscale Res Lett 7 178-24
  • [7] Cheng KJ(2011)Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films Appl Phys Lett 98 232108-28
  • [8] Tsai JM(2010)A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect IEEE Electron Dev Lett 31 600-72
  • [9] Chen HJ(2010)Pulse-programming instabilities of unipolar-type NiO IEEE Electron Dev Lett 31 609-464
  • [10] Chen F(2008)Model for the resistive switching effect in MIM structures based on the transmission properties of narrow constrictions Appl Phys Lett 93 222102-29
12345678910