Resistive switching studies in VO2 thin films

被引：0
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作者：
Abhimanyu Rana
Chuan Li
Gertjan Koster
Hans Hilgenkamp
机构：
[1] Faculty of Science and Technology,
[2] and MESA+ Institute of Nanotechnology,undefined
[3] University of Twente,undefined
[4] School of Engineering and Technology,undefined
[5] BML Munjal University,undefined
来源：
Scientific Reports | / 10卷
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摘要：
The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.
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