Influence of thermal annealing on the electrical and gas-sensitive properties of mos silicon-based tunnel diodes

被引：0
|
作者：
Gaman V.I. [1 ]
Balyuba V.I. [1 ]
Yu Gritsyk V. [1 ]
Davydova T.A. [1 ]
Kalygina V.M. [1 ]
Khludkova L.S. [1 ]
机构：
[1] Siberian Physicotechnical Institute, Tomsk State University
来源：
Russian Physics Journal | 2001年 / 44卷 / 11期
关键词：
Hydrogen; Atmosphere; Electrical Property; Experimental Investigation; Thermal Annealing;
D O I：
10.1023/A:1015355121352
中图分类号：
学科分类号：
摘要：
Results of an experimental investigation into the influence of short-term (10 min) thermal annealing of MOS tunnel diodes on their electrical properties and capacitance, admittance, and flat-band voltage responses to the action of hydrogen are presented. Thermal annealing was performed in vacuum and in the room atmosphere at 573, 613, 653, and 673 K. Vacuum annealing at the temperatures studied was found to decrease the flat-band voltage and dramatically increase the capacitance and admittance responses. As-vacuum-annealed MOS diodes can be used as gas-sensitive elements at zero voltage. Annealing in the room atmosphere produces roughly the same effects at 573 K. As the annealing temperature is increased to 613 K, the gas-sensitive properties of MOS diodes are drastically impaired. © 2001 Plenum Publishing Corporation.
引用
收藏
页码：1133 / 1138
页数：5
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