Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz

被引：0
|
作者：
R. A. Khabibullin
N. V. Shchavruk
D. S. Ponomarev
D. V. Ushakov
A. A. Afonenko
I. S. Vasil’evskii
A. A. Zaycev
A. I. Danilov
O. Yu. Volkov
V. V. Pavlovskiy
K. V. Maremyanin
V. I. Gavrilenko
机构：
[1] Institute of Ultra High Frequency Semiconductor Electronics,
[2] Russian Academy of Sciences,undefined
[3] Belarusian State University,undefined
[4] National Research Nuclear University MEPhI,undefined
[5] National Research University of Electronic Technology MIET,undefined
[6] AO Polyus Research Institute of M.F. Stelmakh,undefined
[7] Institute of Radio Engineering and Electronics,undefined
[8] Russian Academy of Sciences,undefined
[9] Institute for Physics of Microstructures,undefined
[10] Russian Academy of Sciences,undefined
来源：
Semiconductors | 2018年 / 52卷
关键词：
Quantum Cascade Lasers (QCL); QCL Emitting; Laser Level; Arrhenius Temperature Dependence; Metal Waveguide;
D O I：
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中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1380 / 1385
页数：5
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